DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV

被引：301
作者：
ASPNES, DE
STUDNA, AA
KINSBRON, E
机构：
来源：
PHYSICAL REVIEW B | 1984年 / 29卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.29.768
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：768 / 779
页数：12
相关论文
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