LOW THRESHOLD BURIED HETEROSTRUCTURE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED DISORDERING

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230

[2] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[3] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1447 - 1449

[4] GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 1 - 3

[5] HOLONYAK N, 1983, Patent No. 4378155

[6] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[7] EFFICIENT LARGE OPTICAL CAVITY INJECTION LASER [J]. APPLIED PHYSICS LETTERS, 1970, 17 (11) : 499 - &

[8] STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASERS DEFINED BY SI DIFFUSION AND DISORDERING [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 75 - 77

[9] REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALX GA1-X AS HETEROSTRUCTURE LASERS BY SEPARATE OPTICAL AND CARRIER CONFINEMENT [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 590 - 591

[10] PAOLI TL, 1973, J APPL PHYS, V44, P1776

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230

[2] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[3] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1447 - 1449

[4] GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 1 - 3

[5] HOLONYAK N, 1983, Patent No. 4378155

[6] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[7] EFFICIENT LARGE OPTICAL CAVITY INJECTION LASER [J]. APPLIED PHYSICS LETTERS, 1970, 17 (11) : 499 - &

[8] STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASERS DEFINED BY SI DIFFUSION AND DISORDERING [J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 75 - 77

[9] REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALX GA1-X AS HETEROSTRUCTURE LASERS BY SEPARATE OPTICAL AND CARRIER CONFINEMENT [J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 590 - 591

[10] PAOLI TL, 1973, J APPL PHYS, V44, P1776