DEPENDENCE OF THE ALXGA1-XAS BAND EDGE ON ALLOY COMPOSITION BASED ON THE ABSOLUTE MEASUREMENT OF X

被引:131
|
作者
KUECH, TF
WOLFORD, DJ
POTEMSKI, R
BRADLEY, JA
KELLEHER, KH
YAN, D
FARRELL, JP
LESSER, PMS
POLLAK, FH
机构
[1] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210
[2] CUNY GRAD SCH & UNIV CTR,DEPT PHYS,NEW YORK,NY 10036
关键词
D O I
10.1063/1.98380
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:505 / 507
页数:3
相关论文
共 50 条
  • [21] ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS
    SCHUBERT, EF
    GOBEL, EO
    HORIKOSHI, Y
    PLOOG, K
    QUEISSER, HJ
    PHYSICAL REVIEW B, 1984, 30 (02) : 813 - 820
  • [22] HYDROSTATIC-PRESSURE DEPENDENCE OF BAND OFFSETS IN GAAS/ALXGA1-XAS HETEROSTRUCTURES
    CHEONG, HM
    BURNETT, JH
    PAUL, W
    HOPKINS, PF
    GOSSARD, AC
    PHYSICAL REVIEW B, 1994, 49 (15): : 10444 - 10449
  • [23] NON-LINEAR COMPOSITION DEPENDENCE OF THE N DEEP TRAP IN ALXGA1-XAS
    HJALMARSON, HP
    WOLFORD, DJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 286 - 286
  • [24] COMPOSITION DEPENDENCE OF PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
    MIHARA, M
    NOMURA, Y
    MANNOH, M
    YAMANAKA, K
    NARITSUKA, S
    SHINOZAKI, K
    YUASA, T
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3760 - 3764
  • [25] DETERMINATION OF ALLOY COMPOSITION IN MODULATION-DOPED ALXGA1-XAS/GAAS HETEROSTRUCTURE
    WANG, DP
    LO, I
    CHERN, JL
    MITCHEL, WC
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 172 - 174
  • [26] Picosecond Raman studies of the electron-phonon interactions in AlxGa1-xAs:: Nonmonotonic dependence upon the alloy composition
    Tsen, KT
    Ferry, DK
    Salvador, A
    Morkoc, H
    PHYSICAL REVIEW LETTERS, 1998, 80 (21) : 4807 - 4810
  • [27] CONSISTENT FORMULA FOR THE REFRACTIVE-INDEX OF ALXGA1-XAS BELOW THE BAND-EDGE
    DERI, RJ
    EMANUEL, MA
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) : 4667 - 4672
  • [28] BAND DISCONTINUITIES IN GAAS/ALXGA1-XAS HETEROJUNCTION PHOTODIODES
    HAASE, MA
    EMANUEL, MA
    SMITH, SC
    COLEMAN, JJ
    STILLMAN, GE
    APPLIED PHYSICS LETTERS, 1987, 50 (07) : 404 - 406
  • [29] Band structure of a cylindrical GaAs/AlxGa1-xAs superwire
    de Carvalho, RRL
    Ribeiro, J
    Farias, GA
    Freire, VN
    SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) : 221 - 225
  • [30] Photoreflectance investigations of AlxGa1-xAs/GaAs band-gap dependence on Al content
    Sitarek, P
    Misiewicz, J
    Veje, E
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 205 - 208