INSITU X-RAY-DIFFRACTION STUDY OF THE EFFECTS OF GERMANIUM AND NICKEL CONCENTRATIONS ON MELTING IN GOLD-BASED CONTACTS TO GALLIUM-ARSENIDE

被引:13
作者
KIM, T
CHUNG, DDL
机构
关键词
D O I
10.1016/0040-6090(87)90283-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:177 / 192
页数:16
相关论文
共 37 条
[1]   PHASE-TRANSITIONS IN GOLD CONTACTS TO GAAS [J].
BEAM, E ;
CHUNG, DDL .
THIN SOLID FILMS, 1985, 128 (3-4) :321-332
[2]   METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].
BRASLAU, N ;
GUNN, JB ;
STAPLES, JL .
SOLID-STATE ELECTRONICS, 1967, 10 (05) :381-+
[3]   ALLOYED OHMIC CONTACTS TO GAAS [J].
BRASLAU, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :803-807
[4]   SOLID-PHASE FORMATION IN AU-GE-NI, AG-IN-GE, IN-AU-GE GAAS OHMIC CONTACT SYSTEMS [J].
CHRISTOU, A .
SOLID-STATE ELECTRONICS, 1979, 22 (02) :141-&
[5]   GOLD ON GAAS - ITS CRYSTALLOGRAPHIC ORIENTATION AND CONTROL ON THE ORIENTATION OF THE AU-GA REACTION-PRODUCT [J].
CHUNG, DDL ;
BEAM, E .
THIN SOLID FILMS, 1985, 128 (3-4) :299-319
[6]   METALLIZATION SYSTEMS FOR OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS [J].
GUPTA, RP ;
FREYER, J .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 47 (05) :459-467
[7]   SPECIFIC RESISTANCE OF N+-N JUNCTION [J].
GUPTA, SC ;
SHARMA, BL ;
SREEDHAR, AK .
SOLID-STATE ELECTRONICS, 1971, 14 (05) :427-&
[8]   ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].
GYULAI, J ;
MAYER, JW ;
RODRIGUEZ, V ;
YU, AYC ;
GOPEN, HJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3578-+
[9]   THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS [J].
ILIADIS, A ;
SINGER, KE .
SOLID-STATE ELECTRONICS, 1983, 26 (01) :7-&
[10]   THE EFFECTS OF GERMANIUM CONCENTRATION ON THE COMPOUND FORMATION AND MORPHOLOGY OF GOLD-BASED CONTACTS TO GALLIUM-ARSENIDE [J].
KIM, T ;
CHUNG, DDL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03) :762-768