HIGH-FREQUENCY PROBING OF POLY AND DIFFUSION LINES

被引：0

作者：

BELL, O

EISENSTADT, WR

机构：

来源：

SOLID STATE TECHNOLOGY | 1991年 / 34卷 / 08期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method of high frequency measurement and model extraction for high resistivity IC interconnections is presented. The method consists of six steps: 1) customized test structure layout; 2) calibration of the probe reference plane; 3) calibration of Si substate and pad parasitics; 4) s-parameter measurement of test structures; 5) correction for pad parasitics; and 6) circuit model extraction and optimization. For poly interconnects, the extracted model is valid through 500 MHz.

引用

页码：71 / 75

页数：5