HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING

被引：105

作者：

CELLER, GK

HEMMENT, PLF

WEST, KW

GIBSON, JM

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 08期

关键词：

D O I：

10.1063/1.96497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：532 / 534

页数：3

共 17 条

[1]

CELLER GK, 1985, MATER RES SOC S P, V35, P636

[2]

CELLER GK, 1984, APPL PHYS LETT, V43, P868

[3]

Chen C.-E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P702

[4]

CRISTOLOVEANU S, 1985, 4TH P INT C INS FILM

[5] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :335-351

[6] FORMATION OF BURIED INSULATING LAYERS IN SILICON BY THE IMPLANTATION OF HIGH-DOSES OF OXYGEN [J].

HEMMENT, PLF ;

MAYDELLONDRUSZ, E ;

STEPHENS, KG ;

BUTCHER, J ;

IOANNOU, D ;

ALDERMAN, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :157-164

[7] HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN [J].

HEMMENT, PLF ;

PEART, RF ;

YAO, MF ;

STEPHENS, KG ;

CHATER, RJ ;

KILNER, JA ;

MEEKISON, D ;

BOOKER, GR ;

ARROWSMITH, RP .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :952-954

[8]

HEMMENT PLF, 1985, MAY MAT RES SOC S P

[9] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF BURIED OXIDE AND SURFACE CRYSTALLINITY DURING HIGH-DOSE OXYGEN IMPLANTATION INTO SI [J].

HOLLAND, OW ;

SJOREEN, TP ;

FATHY, D ;

NARAYAN, J .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1081-1083

[10]

IZUMI K, 1984, MATER RES SOC S P, V23, P443

← 1 2 →