HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING

被引:105
作者
CELLER, GK
HEMMENT, PLF
WEST, KW
GIBSON, JM
机构
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
关键词
D O I
10.1063/1.96497
中图分类号
O59 [应用物理学];
学科分类号
摘要
16
引用
收藏
页码:532 / 534
页数:3
相关论文
共 17 条
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