INFLUENCE OF ELECTRON VELOCITY OVERSHOOT ON COLLECTOR TRANSIT TIMES OF HBTS

被引：22
作者：
ISHIBASHI, T
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato Wakamiya
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 09期
关键词：
D O I：
10.1109/16.57177
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Collector transit times of heterojunction bipolar transistors with pronounced electron velocity overshoot effect are investigated based on a simple analytical model. The “effectiveness carrier velocity” υeff, which is a measure in determining the transit time, is defined as τc = Wc/2 υeff. It is found that υeff is much different from the average velocity υav which is given by the traveling time through the whole collector depletion layer and the depletion width. With a higher overshoot peak velocity, the collector transit time is shorter than that estimated simply from the average velocity υav. © 1990 IEEE
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页码：2103 / 2105
页数：3
相关论文
共 6 条
[1]   SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].
CHEN, YK ;
NOTTENBURG, RN ;
PANISH, MB ;
HAMM, RA ;
HUMPHREY, DA .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :267-269
[2]   ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SMALL SIZE FABRICATED BY A MULTIPLE SELF-ALIGNMENT PROCESS USING ONE MASK [J].
INADA, M ;
OTA, Y ;
NAKAGAWA, A ;
YANAGIHARA, M ;
HIROSE, T ;
EDA, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2405-2411
[3]   A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J].
ISHIBASHI, T ;
YAMAUCHI, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) :401-404
[4]   A PROPOSED STRUCTURE FOR COLLECTOR TRANSIT-TIME REDUCTION IN ALGAAS-GAAS BIPOLAR-TRANSISTORS [J].
MAZIAR, CM ;
KLAUSMEIERBROWN, ME ;
LUNDSTROM, MS .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) :483-485
[5]   TRANSIT-TIME REDUCTION IN ALGAAS/GAAS HBTS UTILIZING VELOCITY OVERSHOOT IN THE P-TYPE COLLECTOR REGION [J].
MORIZUKA, K ;
KATOH, R ;
ASAKA, M ;
IIZUKA, N ;
TSUDA, K ;
OBARA, M .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :585-587
[6]   ELECTRON VELOCITY OVERSHOOT IN THE COLLECTOR DEPLETION LAYER OF ALGAAS/GAAS HBTS [J].
YAMAUCHI, Y ;
ISHIBASHI, T .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :655-657
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