SOME REMARKS ON HIGH INJECTION THEORIES OF P-N JUNCTION IN CHARGE NEUTRALITY APPROXIMATION

被引:6
作者
HAZMAN, S
机构
关键词
D O I
10.1016/0038-1101(67)90088-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:269 / &
相关论文
共 7 条
[1]   THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J].
FLETCHER, NH .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06) :862-872
[2]  
HAZMAN S, 1965, THESIS HUNGARIAN ACA
[3]  
JOHNSCHER K, 1958, J ELECTRON CONTROL, V5, P1
[4]   A NOTE ON THE EXTENDED THEORY OF THE JUNCTION TRANSISTOR [J].
MISAWA, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1956, 11 (07) :728-739
[5]  
SHOCKLEY W, 1951, ELECTRONS HOLES SEMI, P308
[6]   HIGH INJECTION THEORIES OF P-N JUNCTION IN CHARGE NEUTRALITY APPROXIMATION [J].
VANVLIET, KM .
SOLID-STATE ELECTRONICS, 1966, 9 (03) :185-&
[7]   ON THE VARIATION OF JUNCTION-TRANSISTOR CURRENT-AMPLIFICATION FACTOR WITH EMITTER CURRENT [J].
WEBSTER, WM .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06) :914-920