CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS

被引：153

作者：

CLAASSEN, WAP

VALKENBURG, WGJN

HABRAKEN, FHPM

TAMMINGA, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 12期

关键词：

D O I：

10.1149/1.2119600

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2419 / 2423

页数：5

共 7 条

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LANFORD, WA ;

WANG, KM ;

ROSLER, RS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5630-5633

[2]

CLAASSEN WAP, 1983, 4TH P EUR C CHEM VAP

[3] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS [J].

HABRAKEN, FHPM ;

KUIPER, AET ;

VANOOSTROM, A ;

TAMMINGA, Y ;

THEETEN, JB .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :404-415

[4]

LANFORD WA, 1978, J APPL PHYS, V49, P2472

[5]

ROSLER RS, 1976, SOLID STATE TECHNOL, V19, P45

[6] THE CORRELATIONS BETWEEN PHYSICAL AND ELECTRICAL-PROPERTIES OF PECVD SIN WITH THEIR COMPOSITION RATIOS [J].

SAMUELSON, GM ;

MAR, KM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1773-1778

[7] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J].

SINHA, AK ;

LEVINSTEIN, HJ ;

SMITH, TE ;

QUINTANA, G ;

HASZKO, SE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :601-608

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