QUANTITATIVE MEASUREMENT OF SEMICONDUCTOR HOMOGENEITY FROM PLASMA EDGE

被引：25

作者：

EDWARDS, DF

MAKER, PD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.1728995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2466 / &

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