P-TYPE TO N-TYPE CONVERSION IN GASB BY ION-BEAM MILLING

被引：18
作者：
PANIN, GN
DUTTA, PS
PIQUERAS, J
DIEGUEZ, E
机构：
[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA
[2] UNIV AUTONOMA MADRID,DEPT FIS MAT,E-28049 MADRID,SPAIN
[3] UNIV AUTONOMA MADRID,IST NICOLAS CABRERA,E-28049 MADRID,SPAIN
[4] RUSSIAN ACAD SCI,INST MICROELECTR TECHNOL & HIGH PUR MAT,CHERNOGOLOVKA 142432,RUSSIA
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期
关键词：
D O I：
10.1063/1.115325
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native accepters originally present in the as-grown samples. (C) 1995 American Institute of Physics
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页码：3584 / 3586
页数：3
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