HIGH-EXTINCTION-RATIO MQW ELECTROABSORPTION-MODULATOR INTEGRATED DFB LASER FABRICATED BY INPLANE BANDGAP ENERGY CONTROL TECHNIQUE

被引：37

作者：

AOKI, M

TAKAHASHI, M

SUZUKI, M

SANO, H

UOMI, K

KAWANO, T

TAKAI, A

机构：

[1] Central Research Laboratory, Hitachi Ltd.

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 06期

关键词：

D O I：

10.1109/68.141974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The local bandgap energy of an InGaAs/InGaAsP MQW structure was precisely adjusted by in-plane Eg control in one-step selective area MOCVD growth. The technique was then applied to an MQW electroabsorption modulator integrated DFB laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.

引用

收藏

页码：580 / 582

页数：3

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