ENHANCED CRYSTALLOGRAPHIC SELECTIVITY IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON MESAS AND FORMATION OF (001)-(111)B FACET STRUCTURES FOR EDGE QUANTUM WIRES

被引：72

作者：

NAKAMURA, Y ^{[1
]}

KOSHIBA, S ^{[1
]}

TSUCHIYA, M ^{[1
]}

KANO, H ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,CTR ADV SCI & TECHNOL,MEGURO KU,TOKYO 153,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.105370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystallographic selectivity of molecular beam epitaxial growth of GaAs on mesas consisting of a (001) surface and (111)B facets is studied systematically. It was found that the growth rate on (111)B facets can be drastically reduced to approximately 1/30 of the growth rate on (001) surface by the reduction of As flux on the (111)B facets. This enhanced selectivity results from the enhanced intersurface migration, and strongly indicates a feasibility of forming microheterostructures needed for the fabrication of edge quantum wires on (001)-(111)B mesas.

引用

页码：700 / 702

页数：3

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