ENHANCED CRYSTALLOGRAPHIC SELECTIVITY IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON MESAS AND FORMATION OF (001)-(111)B FACET STRUCTURES FOR EDGE QUANTUM WIRES

被引：72
作者：
NAKAMURA, Y [1 ]
KOSHIBA, S [1 ]
TSUCHIYA, M [1 ]
KANO, H [1 ]
SAKAKI, H [1 ]
机构：
[1] UNIV TOKYO,CTR ADV SCI & TECHNOL,MEGURO KU,TOKYO 153,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期
关键词：
D O I：
10.1063/1.105370
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The crystallographic selectivity of molecular beam epitaxial growth of GaAs on mesas consisting of a (001) surface and (111)B facets is studied systematically. It was found that the growth rate on (111)B facets can be drastically reduced to approximately 1/30 of the growth rate on (001) surface by the reduction of As flux on the (111)B facets. This enhanced selectivity results from the enhanced intersurface migration, and strongly indicates a feasibility of forming microheterostructures needed for the fabrication of edge quantum wires on (001)-(111)B mesas.
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页码：700 / 702
页数：3
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