IN SITU ETCHING OF SILICON SUBSTRATES PRIOR TO EPITAXIAL GROWTH

被引：13

作者：

CHU, TL

GRUBER, GA

STICKLER, R

机构：

来源：

关键词：

D O I：

10.1149/1.2423891

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：156 / &

共 15 条

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[5]

CHU TL, 1963, METALLURGY ADV ELECT, V19, P209

[6]

HONIG RE, 1962, RCA REV, V23, P567

[7]

KNOPP AN, 1965, ELECTROCHEM TECHNOL, V3, P84

[8]

LANG GA, 1963, RCA REV, V24, P488

[9]

PEHLKE RD, 1959, T AM I MIN MET ENG, V215, P781

[10] ROOM TEMPERATURE OXIDATION OF SILICON DURING AND AFTER ETCHING [J].

RITTER, JC ;

ROBINSON, MN ;

FARADAY, BJ ;

HOOVER, JI .