INTERACTION BETWEEN THIN-FILMS OF ZINC AND (100) GAAS

被引：1

作者：

KAMINSKA, E ^{[1
]}

PIOTROWSKA, A ^{[1
]}

ZARECKA, R ^{[1
]}

MIZERA, E ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

来源：

ACTA PHYSICA POLONICA A | 1993年 / 84卷 / 03期

关键词：

D O I：

10.12693/APhysPolA.84.527

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360-degrees-C the formation of Zn3As2 phase, highly oriented with respect to the (100) substrate takes place.

引用

页码：527 / 529

页数：3