MAGNETOCONDUCTANCE DUE TO PARALLEL MAGNETIC-FIELDS IN SILICON INVERSION-LAYERS

被引：43
作者：
MENSZ, PM
WHEELER, RG
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 35卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.35.2844
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：2844 / 2853
页数：10
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