HIGH-PERFORMANCE, GRADED ALGAAS INJECTOR, GAAS GUNN-DIODES AT 94 GHZ

被引：44

作者：

COUCH, NR

SPOONER, H

BETON, PH

KELLY, MJ

LEE, ME

REES, PK

KERR, TM

机构：

[1] GEC HIRST RES CTR,WEMBLEY HA9 7PP,ENGLAND

[2] MARCONI ELECTR DEVICES LTD,LINCOLN LN6 0LF,ENGLAND

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 07期

关键词：

D O I：

10.1109/55.29655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：288 / 290

页数：3

共 12 条

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BETON, PH ;

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COUCH, NR ;

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ELECTRONICS LETTERS, 1988, 24 (07) :434-435

[2] THE USE OF LINEARLY GRADED COMPOSITION ALGAAS INJECTORS FOR INTERVALLEY TRANSFER IN GAAS - THEORY AND EXPERIMENT [J].

COUCH, NR ;

BETON, PH ;

KELLY, MJ ;

KERR, TM ;

KNIGHT, DJ ;

ONDRIA, J .

SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :613-616

[3]

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[4]

HASE I, 1985, I PHYS C SER, V79, P613

[5] HOT-ELECTRON SPECTROSCOPY OF GAAS [J].

HAYES, JR ;

LEVI, AFJ ;

WIEGMANN, W .

PHYSICAL REVIEW LETTERS, 1985, 54 (14) :1570-1572

[6]

HEIBLUM M, 1986, PHYS REV LETT, V56, P2845

[7]

HEILBLUM M, 1985, PHYS REV LETT, V55, P2200

[8] Hot-electron transport in heavily doped GaAs [J].

Long, AP ;

Beton, PH ;

Kelly, MJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) :63-70

[9]

LONG AP, 1986, ELECTRON LETT, V22, P1321

[10]

ONDRIA J, 1987, 17TH P EUR MICR C RO, P673

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