共 50 条
- [1] RAMAN-STUDY OF THE ANHARMONICITY AND DISORDER-INDUCED EFFECTS IN GA1-XALXASJOURNAL DE PHYSIQUE, 1981, 42 (NC6): : 43 - 45JUSSERAND, BSAPRIEL, JALEXANDRE, FDELPECH, P
- [2] DISORDER EFFECTS IN GA1-XALXASSOLID STATE COMMUNICATIONS, 1986, 59 (12) : 869 - 872WANG, XJZHANG, XY
- [3] EFFECTS OF IMPURITY TRANSITIONS ON ELECTROREFLECTANCE IN THIN EPITAXIAL GAAS AND GA1-XALXAS/GAAS LAYERSJOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 432 - 437GLEMBOCKI, OJBOTTKA, NFURNEAUX, JE
- [4] DISORDER ACTIVATED RAMAN-SCATTERING IN GA1-XALXAS ALLOYSSOLID STATE COMMUNICATIONS, 1981, 39 (11) : 1137 - 1141SAINTCRICQ, NCARLES, RRENUCCI, JBZWICK, ARENUCCI, MA
- [5] MOCVD GROWTH OF GAAS/GA1-XALXAS EPITAXIAL LAYERS FOR MONOLITHIC OPTOELECTRONIC DEVICESJOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 466 - 473JONES, MWFORBES, N
- [6] ETCH PITS AND DISLOCATIONS OF GA1-XALXAS LIQUID-PHASE EPITAXIAL LAYERSJOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3367 - 3369KOMIYA, SAKITA, KNISHITANI, YISOZUMI, SKOTANI, T
- [7] LIQUID PHASE EPITAXIAL GROWTH OF GA1-XALXASJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 899 - +WOODALL, JMRUPPRECHT, HREUTER, W
- [8] ABSORPTION-COEFFICIENT AND DERIVATIVE TRANSMISSION MEASUREMENT IN GA1-XALXAS EPITAXIAL LAYERSREVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (10): : 863 - 867MADELON, R
- [9] INVESTIGATION OF SURFACE-ROUGHNESS OF MOLECULAR-BEAM EPITAXY GA1-XALXAS LAYERS AND ITS CONSEQUENCES ON GAAS/GA1-XALXAS HETEROSTRUCTURESJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 950 - 955ALEXANDRE, FGOLDSTEIN, LLEROUX, GJONCOUR, MCTHIBIERGE, HRAO, EVK
- [10] Measurements of Ga1-xAlxAs layers on GaAs with EDSMIKROCHIMICA ACTA, 1996, : 501 - 506Rohrbacher, KKlein, PAndrae, MWernisch, J