HIGH-TEMPERATURE RAMAN STUDIES OF DIAMOND THIN-FILMS

被引:30
|
作者
JOHNSTON, C
CROSSLEY, A
CHALKER, PR
BUCKLEYGOLDER, IM
KOBASHI, K
机构
[1] HARWELL LAB, AEA TECHNOL, DEPT SURFACE SCI & TECHNOL, DIDCOT OX11 0RA, OXON, ENGLAND
[2] KOBE STEEL LTD, CTR ELECTR, KOBE 651, JAPAN
关键词
D O I
10.1016/0925-9635(92)90145-E
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Raman spectroscopy has become the definitive technique for assessing the quality of diamond thin films. Not only can the diamond/graphite contents be determined, but more detailed information, for example, about the domain size and the stress associated with a coating can be gleaned. The results of a Raman microprobe study of synthetic diamond coatings on silicon and alumina substrates, at elevated temperatures (up to 750°C) in controlled atmospheres of hydrogen, argon and oxygen are presented. The position of the Raman band associated with crystalline diamond (1332 cm-1) was monitored as a function of temperature. From the shift of the Raman band from its natural position, an associated stress value can be obtained. © 1992.
引用
收藏
页码:450 / 456
页数:7
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