GROWTH OF (AL,GA)AS/GAAS HETEROSTRUCTURES FOR HEMT DEVICES

被引：17

作者：

ANDRE, JP

BRIERE, A

ROCCHI, M

RIET, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90447-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：445 / 449

页数：5

共 6 条

[1]

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MALUENDA, J .

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[4] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].

HIYAMIZU, S ;

SAITO, J ;

NANBU, K ;

ISHIKAWA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611

[5] ENHANCEMENT-MODE HIGH ELECTRON-MOBILITY TRANSISTORS FOR LOGIC APPLICATIONS [J].

MIMURA, T ;

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HIKOSAKA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L317-L319

[6] ELECTRON MOBILITIES IN MODULATION-DOPED GAAS-(ALGA)AS HETEROSTRUCTURES [J].

STORMER, HL .

SURFACE SCIENCE, 1983, 132 (1-3) :519-526

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