THEORY OF ELECTRONICALLY STIMULATED DEFECT MIGRATION IN SEMICONDUCTORS

被引：30

作者：

PANTELIDES, ST

OSHIYAMA, A

CAR, R

KELLY, PJ

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.30.2260

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2260 / 2262

页数：3

共 9 条

[1] THEORY OF ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J].

BARAFF, GA ;

SCHLUTER, M ;

ALLAN, G .

PHYSICAL REVIEW LETTERS, 1983, 50 (10) :739-742

[2] BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J].

BARYAM, Y ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1129-1132

[3] NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].

BOURGOIN, JC ;

CORBETT, JW .

PHYSICS LETTERS A, 1972, A 38 (02) :135-&

[4] MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].

CAR, R ;

KELLY, PJ ;

OSHIYAMA, A ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817

[5] RECOMBINATION ENHANCED DEFECT REACTIONS [J].

KIMERLING, LC .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1391-1401

[6] MULTIVACANCIES, INTERSTITIALS, AND SELF-INTERSTITIAL MIGRATION IN SILICON [J].

PANTELIDES, ST ;

IVANOV, I ;

SCHEFFLER, M ;

VIGNERON, JP .

PHYSICA B & C, 1983, 116 (1-3) :18-27

[7]

STONEHAM AM, 1981, REP PROGR PHYS, V44, P251

[8] RECOMBINATION-ENHANCED MIGRATION OF INTERSTITIAL ALUMINUM IN SILICON [J].

TROXELL, JR ;

CHATTERJEE, AP ;

WATKINS, GD ;

KIMERLING, LC .

PHYSICAL REVIEW B, 1979, 19 (10) :5336-5348

[9]

Watkins G.D., 1975, LATTICE DEFECTS SEMI, V23, P1

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