ACCURATE ANALYSIS OF EMITTER BALLASTING IN HBT POWER TRANSISTORS

被引：0
|
作者：
MEZUIMINTSA, R
HASSAINE, N
RIET, M
VILLEFORCEIX, B
KONCZYKOWSKA, A
VUYE, S
WANG, H
机构：
[1] FRANCE-TELECOM, Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 92220 Bagneux
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90543-Z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An accurate analysis of emitter ballasting, taking into account the current gain dependence on the temperature and the collector current is presented in this paper. Numerical computations of current-voltage characteristics have been performed using the emitter ballasting resistance as a parameter. Power HBTs for mobile communications have been fabricated. Load-pull measurements at the L band have shown 30 dBm maximum output power and 45% power added efficiency with 8.5dB associated gain.
引用
收藏
页码：777 / 780
页数：4
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