ACCURATE ANALYSIS OF EMITTER BALLASTING IN HBT POWER TRANSISTORS

被引：0

作者：

MEZUIMINTSA, R

HASSAINE, N

RIET, M

VILLEFORCEIX, B

KONCZYKOWSKA, A

VUYE, S

WANG, H

机构：

[1] FRANCE-TELECOM, Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 92220 Bagneux

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90543-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate analysis of emitter ballasting, taking into account the current gain dependence on the temperature and the collector current is presented in this paper. Numerical computations of current-voltage characteristics have been performed using the emitter ballasting resistance as a parameter. Power HBTs for mobile communications have been fabricated. Load-pull measurements at the L band have shown 30 dBm maximum output power and 45% power added efficiency with 8.5dB associated gain.

引用

页码：777 / 780

页数：4

共 4 条

[1]

Bergmann, Gerstner, Some new aspect of thermal instability of current distribution in power transistors, IEEE Transactions on Electron Devices, 13 ED, pp. 630-634, (1966)

[2]

Reich, Bakim, Malinowski, RF power transistor for reliable communications systems, IEEE Transactions on Electron Devices, pp. 816-818, (1970)

[3]

Arnold, Zoroglu, A quantitative study of emitter ballasting, IEEE Transactions on Electron Devices, pp. 385-391, (1974)

[4]

Wang, Algani, Koncskykowska, Zuberek, Temperature dependence of DC currents in HBT, next 1992 IEEE International Microwave symposium MTT-S, (1992)

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