ON THE PROPERTIES OF INSB QUANTUM WELLS

被引：60

作者：

VANWELZENIS, RG

RIDLEY, BK

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 02期

关键词：

D O I：

10.1016/0038-1101(84)90101-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：113 / 120

页数：8

共 16 条

[1] HIGH ELECTRIC-FIELD HALL-EFFECT MEASUREMENTS ON N-TYPE INSB AT 77K [J].

ALBERGA, GE ;

VANWELZENIS, RG ;

DEZEEUW, WC .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (02) :107-120

[2] IMPACT IONIZATION AND QUANTUM EFFICIENCY IN INSB [J].

BEATTIE, AR .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 111 (01) :141-153

[3] VELOCITY DISTRIBUTION OF POLARONS IN CROSSED ELECTRIC AND MAGNETIC-FIELDS [J].

BROSENS, F ;

DEVREESE, JT .

SOLID STATE COMMUNICATIONS, 1982, 44 (05) :597-601

[4] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

[5] NEGATIVE DIFFERENTIAL MOBILITY IN INDIUM ANTIMONIDE [J].

FAWCETT, W ;

RUCH, JG .

APPLIED PHYSICS LETTERS, 1969, 15 (11) :368-&

[6] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J].

HESS, K ;

MORKOC, H ;

SHICHIJO, H ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1979, 35 (06) :469-471

[7] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

[8]

RIDDOCK FA, 1984, UNPUB J PHYS C

[9] THE ELECTRON PHONON INTERACTION IN QUASI-2-DIMENSIONAL SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].

RIDLEY, BK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (28) :5899-5917

[10] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :293-&

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