INDIUM VACANCY IN AS-GROWN INP - A POSITRON-ANNIHILATION STUDY

被引：30
|
作者：
BRETAGNON, T
DANNEFAER, S
KERR, D
机构：
[1] Department of Physics, University of Winnipeg, Winnipeg
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.352769
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The positron lifetime technique has been used to investigate grown-in defects in various types of indium phosphide. A neutral monovacancy-type defect has been detected independently of the nature (Zn,Fe,Si,S) and concentration of the dopants. The defect is stable at least up to 800-degrees-C, and is suggested to be a trapped indium vacancy.
引用
收藏
页码：4697 / 4699
页数：3
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