INDIUM VACANCY IN AS-GROWN INP - A POSITRON-ANNIHILATION STUDY

被引：30
|
作者：
BRETAGNON, T
DANNEFAER, S
KERR, D
机构：
[1] Department of Physics, University of Winnipeg, Winnipeg
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.352769
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The positron lifetime technique has been used to investigate grown-in defects in various types of indium phosphide. A neutral monovacancy-type defect has been detected independently of the nature (Zn,Fe,Si,S) and concentration of the dopants. The defect is stable at least up to 800-degrees-C, and is suggested to be a trapped indium vacancy.
引用
收藏
页码：4697 / 4699
页数：3
相关论文
共 50 条
  • [1] THE STUDY OF NATIVE DEFECTS IN AS-GROWN GAAS BY POSITRON-ANNIHILATION
    FUJII, S
    UEDONO, A
    TANIGAWA, S
    HYPERFINE INTERACTIONS, 1993, 79 (1-4): : 719 - 723
  • [2] POSITRON-ANNIHILATION SPECTROSCOPY OF NATIVE VACANCIES IN AS-GROWN GAAS
    CORBEL, C
    STUCKY, M
    HAUTOJARVI, P
    SAARINEN, K
    MOSER, P
    PHYSICAL REVIEW B, 1988, 38 (12): : 8192 - 8208
  • [3] Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements
    Chen, ZQ
    Hu, XW
    Wang, SJ
    Li, SQ
    SOLID STATE COMMUNICATIONS, 1996, 99 (10) : 745 - 749
  • [4] Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements
    Chen, ZQ
    Hu, XW
    Wang, SJ
    Li, SQ
    SOLID STATE COMMUNICATIONS, 1996, 97 (11) : 951 - 956
  • [5] Identification of vacancy-type defects in as-grown InP by positron annihilation rate distribution measurements
    Wuhan Univ, Wuhan, China
    Solid State Commun, 10 (745-749):
  • [6] VACANCY FORMATION VOLUME IN INDIUM FROM POSITRON-ANNIHILATION MEASUREMENTS
    DICKMAN, JE
    JEFFERY, RN
    GUSTAFSON, DR
    PHYSICAL REVIEW B, 1977, 16 (08): : 3334 - 3337
  • [7] VACANCY FORMATION VOLUME IN INDIUM FROM POSITRON-ANNIHILATION MEASUREMENTS
    DICKMAN, JE
    JEFFERY, RN
    GUSTAFSON, DR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 323 - 323
  • [8] Positron-annihilation study of vacancy defects in InAs
    Mahony, J
    Mascher, P
    PHYSICAL REVIEW B, 1997, 55 (15): : 9637 - 9641
  • [9] Positron-annihilation study of vacancy defects in InAs
    Mahony, J.
    Mascher, P.
    Physical Review B: Condensed Matter, 55 (15):
  • [10] Positron-annihilation study of compensation defects in InP
    Shan, YY
    Deng, AH
    Ling, CC
    Fung, S
    Ling, CD
    Zhao, YW
    Sun, TN
    Sun, NF
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 1998 - 2001
12345