PAIR-GROOVE-SUBSTRATE GAAS/ALGAAS MULTIQUANTUM WELL LASERS BY MOLECULAR-BEAM EPITAXY

被引：14
作者：
MANNOH, M
YUASA, T
NARITSUKA, S
SHINOZAKI, K
ISHII, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期
关键词：
D O I：
10.1063/1.96018
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：728 / 731
页数：4
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[5]   GROWTH OF GAAS-GA1-XALXAS OVER PREFERENTIALLY ETCHED CHANNELS BY MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR 2-DIMENSIONAL THIN-FILM DEFINITION [J].
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[6]   A GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN-BEAM [J].
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[7]   EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
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[8]   HIGH-POWER OPERATION OF INDEX-GUIDED VISIBLE GAAS/GAALAS MULTIQUANTUM WELL LASERS [J].
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[9]   CHANNELED-SUBSTRATE GAAS/ALGAAS MULTIPLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
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