ELECTRON MOBILITIES IN SIC POLYTYPES

被引：17

作者：

PATRICK, L

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 01期

关键词：

D O I：

10.1063/1.1709007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：50 / &

共 18 条

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[2]

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HERRING, C ;

VOGT, E .

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[7] IONIZED-IMPURITY SCATTERING MOBILITY OF ELECTRONS IN SILICON [J].

LONG, D ;

MYERS, J .

PHYSICAL REVIEW, 1959, 115 (05) :1107-1118

[8]

MITCHELL RS, 1957, Z KRISTALLOGR, V109, P1

[9] TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM [J].

MORIN, FJ ;

GEBALLE, TH ;

HERRING, C .

PHYSICAL REVIEW, 1957, 105 (02) :525-539

[10] LUMINESCENCE OF 4H SIC AND LOCATION OF CONDUCTION-BAND MINIMA IN SIC POLYTYPES [J].

PATRICK, L ;

CHOYKE, WJ ;

HAMILTON, DR .

PHYSICAL REVIEW, 1965, 137 (5A) :1515-&

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