FAST AND SLOW PROCESSES IN LIGHT-INDUCED ELECTRON-SPIN-RESONANCE IN HYDROGENATED AMORPHOUS SI-N FILMS

被引：7

作者：

KUMEDA, M ^{[1
]}

SUGIMOTO, A ^{[1
]}

ZHANG, JY ^{[1
]}

OZAWA, Y ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV, FAC TECHNOL, DEPT ELECTR, KANAZAWA, ISHIKAWA 920, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 8A期

关键词：

LIGHT-INDUCED ESR; SI-N ALLOY FILMS; DANGLING BONDS; CHARGE TRAPPING; BOND BREAKING;

D O I：

10.1143/JJAP.32.L1046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Detailed light-induced Electron Spin Resonance (ESR) measurements are performed at room temperature and liquid nitrogen temperature for hydrogenated amorphous silicon alloyed with various amounts of nitrogen. The increase in the ESR signal intensity with increasing illumination time can be described in terms of a fast increase and a slow increase. The fast-increase component decays faster after ceasing illumination than the slow-increase component. The origins of the two components are discussed.

引用

页码：L1046 / L1048

页数：3

共 5 条

[1] Electron spin resonance study of light-induced annealing of dangling bonds in glow discharge hydrogenated amorphous silicon: Deconvolution of electron spin resonance spectra
Takeda, K
Hikita, H
Kimura, Y
Yokomichi, H
Morigaki, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12A): : 6309 - 6317
[2] Light-induced defect creation processes and light-induced defects in hydrogenated amorphous silicon☆
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[3] Recombination processes and light-induced defect creation in hydrogenated amorphous silicon
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[4] The Nature and the Kinetics of Light-Induced Defect Creation in Hydrogenated Amorphous Silicon Films and Solar Cells
Melskens, Jimmy
Schouten, Marc
Mannheim, Awital
Vullers, Albert S.
Mohammadian, Yalda
Eijt, Stephan W. H.
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Zeman, Miro
Smets, Arno H. M.
IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (06): : 1331 - 1336
[5] DISTRIBUTIONS OF THERMAL-ANNEALING ACTIVATION-ENERGIES FOR LIGHT-INDUCED SPINS IN FAST AND SLOW PROCESSES IN A-SI1-XNX-H ALLOYS
ZHANG, J
KUMEDA, M
SHIMIZU, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (10): : 5533 - 5538

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