CRUCIBLE DE-WETTING DURING BRIDGMAN GROWTH OF SEMICONDUCTORS IN MICROGRAVITY

被引：78
作者：
DUFFAR, T
PARETHARTER, I
DUSSERRE, P
机构：
[1] CEA-IRDI-DMECN-DMG-SEM, Laboratoire d'Etude de la Solidification, Centre d'Etudes Nucléaires, F-38041 Grenoble Cedex
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 100卷 / 1-2期
关键词：
D O I：
10.1016/0022-0248(90)90620-Z
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
After a literature survey and observations made during a space experiment, the phenomenon of crucible de-wetting by the crystal during Bridgman solidification in microgravity is explained by a model involving composite wetting of the crucible by the liquid, crystal angle of growth and interface advance. A ground experiment was run in order to validate this model which also explains why a crystal detaches from the crucible surface when a sand blasted crucible is used in Bridgman solidification on the ground. It is shown that de-wetting leads to enhanced quality of the crystal produced and that capillary-induced convection effects are not to be feared in this case. Consequently, it is highly advisable to use rough-surface crucibles for crystal growth both in microgravity and on the ground. © 1990.
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页码：171 / 184
页数：14
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