RADIO-FREQUENCY BIASED MICROWAVE PLASMA-ETCHING TECHNIQUE - A METHOD TO INCREASE SIO2 ETCH RATE

被引：69

作者：

SUZUKI, K

NINOMIYA, K

NISHIMATSU, S

OKUDAIRA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1025 / 1034

页数：10

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