STABLE PHOTOINDUCED PARAMAGNETIC DEFECTS IN HYDROGENATED AMORPHOUS-SILICON NITRIDE

被引：53

作者：

KRICK, DT ^{[1
]}

LENAHAN, PM ^{[1
]}

KANICKI, J ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.98362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：608 / 610

页数：3

共 9 条

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[2]

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[5]

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SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :311-317

[7] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

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[8]

ULTEE CL, 1960, PHYS CHEM, V64, P1873

[9] ELECTRON-SPIN RESONANCE IN DISCHARGE-PRODUCED SILICON-NITRIDE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :L35-L37

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