GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES

被引：36

作者：

CADORET, R

HOLLAN, L

LOYAU, JB

OBERLIN, M

OBERLIN, A

机构：

[1] UER SCI,LAB CRISTALLOGR & PHYS MILIEUX CONDENSES,LES CEZEAUX,BP 45,63170 AUBIERE,FRANCE

[2] FAC SCI ORLEANS,LAB MARCEL MATHIEU,CNRS 131,45045 ORLEANS,FRANCE

来源：

关键词：

D O I：

10.1016/0022-0248(75)90223-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：187 / 194

页数：8

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[2]

Hartman P., 1963, Z KRISTALLOGR, V119, P65

[3] CRYSTAL GROWTH AND ADSORPTION [J].

KERN, R .

BULLETIN DE LA SOCIETE FRANCAISE MINERALOGIE ET DE CRISTALLOGRAPHIE, 1968, 91 (03) :247-&

[4]

LOYAU JB, 1975, J CRYST GR, V29, P174

[5] EPITAXIAL GAAS KINETIC STUDIES - (001)ORIENTATION [J].

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SHAW, DW .