IMPROVEMENT IN THE SURFACE PHOTOVOLTAGE METHOD OF DETERMINING DIFFUSION LENGTH IN THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON

被引:11
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MOORE, AR
LIN, HS
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10.1063/1.338345
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O59 [应用物理学];
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页码:4816 / 4819
页数:4
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共 8 条
[1]   DIFFUSION LENGTH OF HOLES IN A-SI-H BY THE SURFACE PHOTO-VOLTAGE METHOD [J].
DRESNER, J ;
SZOSTAK, DJ ;
GOLDSTEIN, B .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :998-999
[2]   SURFACE PHOTOVOLTAGE MEASUREMENT OF LIGHT INSTABILITY OF AMORPHOUS-SILICON FILMS [J].
EPSTEIN, KA ;
TRAN, NT ;
JEFFREY, FR ;
MOORE, AR .
APPLIED PHYSICS LETTERS, 1986, 49 (03) :173-175
[4]  
HACK M, 1982, J APPL PHYS, V53, P5270
[5]  
MCMAHON T, 1982, 16TH P IEEE PHOT SPE, P1389
[8]   DIFFERENTIAL SURFACE PHOTOVOLTAGE MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN THIN-FILMS [J].
SCHWARZ, R ;
SLOBODIN, D ;
WAGNER, S .
APPLIED PHYSICS LETTERS, 1985, 47 (07) :740-742