HEAVILY DOPED SILICON STUDIED BY LUMINESCENCE AND SELECTIVE ABSORPTION

被引：31

作者：

WAGNER, J ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 1-2期

关键词：

D O I：

10.1016/0038-1101(85)90206-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：25 / 30

页数：6

共 26 条

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