LUMINESCENCE DUE TO ISOELECTRONIC SUBSTITUTION OF BISMUTH FOR PHOSPHORUS IN GALLIUM PHOSPHIDE - (CRYSTAL GROWTH - DOPING - DIFFUSION - PHOTOLUMINESCENCE - ELECTROLUMINESCENCE - TEMPERATURE DEPENDENCE - E)

被引：105

作者：

TRUMBORE, FA

GERSHENZON, M

THOMAS, DG

机构：

来源：

关键词：

D O I：

10.1063/1.1754592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4 / +

页数：1

共 5 条

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ATEN, AC ;

HAANSTRA, JH .

PHYSICS LETTERS, 1964, 11 (02) :97-98

[2]

ATEN AC, 1965, PHILIPS RES REP, V20, P295

[3]

GERSHENZON M, IN PRESS

[4] PAIR SPECTRA + EDGE EMISSION IN GALLIUM PHOSPHIDE [J].

THOMAS, DG ;

GERSHENZON, M ;

TRUMBORE, FA .

PHYSICAL REVIEW, 1964, 133 (1A) :A269-A279

[5] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

THOMAS, DG ;

HOPFIELD, JJ ;

FROSCH, CJ .