DIRECT MEASUREMENT OF DEPLETION LAYER WIDTH VARIATION VS APPLIED BIAS FOR A P-N JUNCTION (SCANNING ELECTRON MICROSCOPY MOS DEVICES SI-AL E)

被引：30

作者：

MACDONALD, NC

EVERHART, TE

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 7卷 / 10期

关键词：

D O I：

10.1063/1.1754252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：267 / +

页数：1

相关论文

共 4 条

[1] CONTROL OF ELECTRIC FIELD AT SURFACE OF P-N JUNCTIONS [J].

DAVIES, RL ;

GENTRY, FE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :313-+

[2] NOVEL METHOD OF SEMICONDUCTOR DEVICE MEASUREMENTS [J].

EVERHART, TE ;

MATTA, RK ;

WELLS, OC .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1642-&

[3] EVALUATION OF PASSIVATED INTEGRATED CIRCUITS USING THE SCANNING ELECTRON MICROSCOPE [J].

EVERHART, TE ;

WELLS, OC ;

MATTA, RK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) :929-936

[4] REVERSIBLE CHANGES IN TRANSISTOR CHARACTERISTICS CAUSED BY SCANNING ELECTRON MICROSCOPE EXAMINATION [J].

GREEN, D ;

SANDOR, JE ;

OKEEFFE, TW ;

MATTA, RK .

APPLIED PHYSICS LETTERS, 1965, 6 (01) :3-&