BAND-FILLING CURRENT IN HEAVILY DOPED GAAS DIODES

被引：12

作者：

AUKERMAN, LW

MILLEA, MF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.1714535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2585 / &

共 8 条

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ARCHER, RJ ;

LEITE, RC ;

YARIV, A ;

PORTO, SPS ;

WHELAN, JM .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :483-&

[2] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].

CHYNOWETH, A ;

LOGAN, RA ;

FELDMANN, WL .

PHYSICAL REVIEW, 1961, 121 (03) :684-&

[3] DEGENERATE GERMANIUM .1. TUNNEL, EXCESS, AND THERMAL CURRENT IN TUNNEL DIODES [J].

MEYERHOFER, D ;

BROWN, GA ;

SOMMERS, HS .

PHYSICAL REVIEW, 1962, 126 (04) :1329-&

[4] LIGHT EMISSION FROM REVERSE BIASED GAAS + INP P-N JUNCTIONS [J].

MICHEL, AE ;

MARINACE, JC ;

NATHAN, MI .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) :3543-&

[5] ROLE OF DIFFUSION CURRENT IN ELECTROLUMINESCENCE OF GAAS DIODES ( ELECTRON IRRADIATION EFFECTS 78 DEGREES-300 DEGREES K E/T ) [J].

MILLEA, MF ;

AUKERMAN, LW .

APPLIED PHYSICS LETTERS, 1964, 5 (08) :168-+

[6] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE [J].

NELSON, DF ;

GERSHENZON, M ;

ASHKIN, A .

APPLIED PHYSICS LETTERS, 1963, 2 (09) :182-184

[7] INFLUENCE OF DEGENERACY ON RECOMBINATION RADIATION IN GERMANIUM [J].

PANKOVE, JI .

PHYSICAL REVIEW LETTERS, 1960, 4 (01) :20-21

[8]

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