GAAS-FET DEVICE AND CIRCUIT SIMULATION IN SPICE

被引：319

作者：

STATZ, H ^{[1
]}

NEWMAN, P ^{[1
]}

SMITH, IW ^{[1
]}

PUCEL, RA ^{[1
]}

HAUS, HA ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：160 / 169

页数：10

共 9 条

[1]

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[8] A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION [J].

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