COMPARISON OF COMPOSITIONALLY GRADED TO ABRUPT EMITTER-BASE JUNCTIONS USED IN THE HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：31

作者：

ENQUIST, PM ^{[1
]}

RAMBERG, LP ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.337897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2663 / 2669

页数：7

共 7 条

[1]

ANKRI D, 1983, I PHYS C SER, V65, P431

[2]

ENQUIST PM, 1985, I PHYS C SER, V74, P599

[3] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

CAPASSO, F ;

MALIK, RJ ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951

[4] CURRENT GAIN ENHANCEMENT IN GRADED BASE ALGAAS/GAAS HBTS ASSOCIATED WITH ELECTRON-DRIFT MOTION [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (04) :L241-L243

[5] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[6] EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

NAKAJIMA, O ;

NAGATA, K ;

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L596-L598

[7] EMITTER BASE BANDGAP GRADING EFFECTS ON GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CHARACTERISTICS [J].

YOSHIDA, J ;

KURATA, M ;

MORIZUKA, K ;

HOJO, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1714-1721

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