REALISTIC TIGHT-BINDING MODEL FOR CHEMISORPTION - H ON SI AND GE (III)

被引:150
作者
PANDEY, KC [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
PHYSICAL REVIEW B | 1976年 / 14卷 / 04期
关键词
D O I
10.1103/PhysRevB.14.1557
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1557 / 1570
页数:14
相关论文
共 41 条
[1]   SELF-CONSISTENT QUANTUM-THEORY OF CHEMISORPTION - H ON SI(111) [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1975, 34 (13) :806-809
[2]   SURFACE STATES AND SURFACE BONDS OF SI(111) [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1973, 31 (02) :106-109
[3]   SURFACE STUDIES BY SPECTRAL ANALYSIS OF INTERNALLY REFLECTED INFRARED RADIATION - HYDROGEN ON SILICON [J].
BECKER, GE ;
GOBELI, GW .
JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (12) :2942-&
[4]   X-RAY PHOTOEMISSION CROSS-SECTION MODULATION IN DIAMOND, SILICON, GERMANIUM, METHANE, SILANE, AND GERMANE [J].
CAVELL, RG ;
KOWALCZYK, SP ;
LEY, L ;
POLLAK, RA ;
MILLS, B ;
SHIRLEY, DA ;
PERRY, W .
PHYSICAL REVIEW B, 1973, 7 (12) :5313-5316
[5]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[7]  
DAVISSON SG, 1970, SOLID STATE PHYSICS, V25
[8]   FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J].
DRESSELHAUS, G ;
DRESSELHAUS, MS .
PHYSICAL REVIEW, 1967, 160 (03) :649-+
[9]   PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].
EASTMAN, DE ;
GROBMAN, WD .
PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&
[10]   INDIRECT INTERACTION BETWEEN ADATOMS ON A TIGHT-BINDING SOLID [J].
EINSTEIN, TL ;
SCHRIEFFER, JR .
PHYSICAL REVIEW B, 1973, 7 (08) :3629-3648