High-rate deposition of high-quality silicon nitride film at room temperature by quasi-remote plasma chemical vapor deposition

High-rate deposition of high-quality SiN films at room temperature has been achieved by quasi-remote plasma chemical vapor deposition method using a cylindrical multislot waveguide. The quasi-remote plasma is defined as the plasma whose density near the substrate is less than 1/10 of that in the densest region. Since the number of incident ions is reduced, the temperature rise of the substrate is suppressed even when the high-density plasma is used. Nitrogen excited by the high-density plasma reacts with monosilane to generate a silicon nitride precursor. The precursor is further excited by many electrons to emit hydrogen atoms. The excited precursor is adsorbed on the substrate surface and the silicon nitride film with low hydrogen content is deposited even at room temperature.