THEORETICAL CALCULATION OF OPTICAL GAIN AND THRESHOLD CURRENT-DENSITY IN STRAINED IN1-XGAXAS/INP QUANTUM-WELL LASERS USING STRAIN-DEPENDENT CONDUCTION-BAND AND VALENCE-BAND STRUCTURES

被引：7
作者：
SUGAWARA, M
YAMAZAKI, S
机构：
[1] Fujitsu Laboratories Ltd, Atsugi, 243-01
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1994年 / 7卷 / 03期
关键词：
STRAINED QUANTUM WELLS; QUANTUM-WELL LASERS; INGAAS/INP; THRESHOLD CURRENT DENSITY; OPTICAL GAIN;
D O I：
10.1002/mop.4650070308
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We theoretically calculate the optical gain of In1-xGaxAs/InGaAsP strained quantum wells on (001) InP substrates based on strain-dependent conduction-band and valence-band structures. Using the calculated gain, we estimate threshold current density of the strained quantum-well lasers. We show that both biaxial compressive and tensile strains can lower the threshold current density by 1/2-1/3, and clarify the mechanism for the reduction. (C) 1994 John Wiley and Sons. Inc.
引用
收藏
页码：107 / 113
页数：7
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