DECAY TIMES OF EXCITONS IN LATTICE-MATCHED INGAAS/INP SINGLE QUANTUM-WELLS

被引：8

作者：

BRENER, I ^{[1
]}

GERSHONI, D ^{[1
]}

RITTER, D ^{[1
]}

PANISH, MB ^{[1
]}

HAMM, RA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.104457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of the photoluminescence decay times in lattice-matched InGaAs/InP single quantum wells grown by two different epitaxial techniques is presented. We show that these decay times can be measured directly using a nonlinear photoluminescence autocorrelation technique. A model based on the saturation of localized exciton states describes the temporal behavior and the optical nonlinearities observed very well.

引用

收藏

页码：965 / 967

页数：3

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