DIRECT EXTRACTION OF THE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR SMALL-SIGNAL EQUIVALENT-CIRCUIT

被引:125
作者
COSTA, D [1 ]
LIU, WU [1 ]
HARRIS, JS [1 ]
机构
[1] STANFORD UNIV,JOINT SERV ELECTR PROGRAM,STANFORD,CA 94305
关键词
D O I
10.1109/16.83724
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A technique for determining the small-signal equivalent-circuit model of an AlGaAs/GaAs heterojunction bipolar transistor (HBT) is presented. Most of the parasitic elements are independently extracted from measurements of test structures. The intrinsic elements are calculated from y-parameter data, which are de-embedded from the previously determined parasitics. The agreement between the measured and model-produced data is excellent over the frequency range of 1 to 18 GHz.
引用
收藏
页码:2018 / 2024
页数:7
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