ENHANCED ACTIVATION OF ZN-IMPLANTED GAAS

被引：16

作者：

DAVIES, DE ^{[1
]}

MCNALLY, PJ ^{[1
]}

机构：

[1] COMSAT LABS,CLARKSBURG,MD 20734

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.94733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：304 / 306

页数：3

共 23 条

[1] EFFECT OF DUAL IMPLANTS INTO GAAS [J].

AMBRIDGE, T ;

HECKINGBOTTOM, R ;

BELL, EC ;

SEALY, BJ ;

STEPHENS, KG ;

SURRIDGE, RK .

ELECTRONICS LETTERS, 1975, 11 (15) :314-315

[2] ENHANCED ANNEALING EFFECTS IN BORON-IMPLANTED LAYERS IN SILICON BY POSTIMPLANTATION OF SILICON IONS [J].

BAUER, LO .

APPLIED PHYSICS LETTERS, 1972, 20 (03) :107-&

[3]

BLAIRMES NG, 1968, PHYS LETT A, V28, P178

[4]

CASEY HC, 1975, POINT DEFECTS SOLIDS, V2, pCH2

[5] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS [J].

DAVIES, DE ;

MCNALLY, PJ ;

LORENZO, JP ;

JULIAN, M .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :102-103

[6]

DAVIES DE, 1983, ELECTRON DEVICE LETT, V4, P356

[7]

DAVIES DE, 1983, I PHYS C, V65, P169

[8]

DAVIES DE, 1976, 4TH P C SCI IND APPL, P420

[9] COMPARISON OF ZN-DOPED GAAS LAYERS PREPARED BY LIQUID-PHASE AND VAPOR-PHASE TECHNIQUES, INCLUDING DIFFUSION LENGTHS AND PHOTOLUMINESCENCE [J].

ETTENBERG, M ;

NUESE, CJ .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3500-3508

[10]

GULAI J, 1970, APPL PHYS LETT, V17, P332

← 1 2 3 →