DOES THE EL2 DEFECT IN GAAS CONTAIN THE ASI INTERSTITIAL

被引：1
|
作者：
WOSINSKI, T
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1988年 / 3卷 / 04期
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D O I：
10.1088/0268-1242/3/4/020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：411 / 412
页数：2
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