ION-BOMBARDMENT INDUCED SURFACE-TOPOGRAPHY MODIFICATION OF CLEAN AND CONTAMINATED SINGLE-CRYSTAL CU AND SI

被引:28
作者
LEWIS, GW
KIRIAKIDES, G
CARTER, G
NOBES, MJ
机构
关键词
D O I
10.1002/sia.740040404
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:141 / 150
页数:10
相关论文
共 30 条
[1]   PREDICTION OF ION-BOMBARDED SURFACE TOPOGRAPHIES USING FRANKS KINEMATIC THEORY OF CRYSTAL DISSOLUTION [J].
BARBER, DJ ;
FRANK, FC ;
MOSS, M ;
STEEDS, JW ;
TSONG, IST .
JOURNAL OF MATERIALS SCIENCE, 1973, 8 (07) :1030-1040
[2]   ANALYTICAL MODELING OF SPUTTER INDUCED SURFACE MORPHOLOGY [J].
CARTER, G ;
COLLIGON, JS ;
NOBES, MJ .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (02) :65-87
[3]  
CARTER G, 1982, UNPUB NUCL INSTRUM M
[4]  
CARTER G, 1980, P S SPUTTERING, P604
[5]  
CARTER G, SPUTTERING ION BOMBA, V1, pCH4
[6]  
CARTER G, 1981, 7TH P INT C AT COLL, V2, P69
[7]  
CARTER G, 1982, UNPUB RAD EFF
[8]   DEPTH-PROFILING OF CU-NI SANDWICH SAMPLES BY SECONDARY ION MASS-SPECTROMETRY [J].
HOFER, WO ;
LIEBL, H .
APPLIED PHYSICS, 1975, 8 (04) :359-360
[9]   INFLUENCE OF REACTIVE GASES ON SPUTTERING AND SECONDARY ION EMISSION - OXIDATION OF TITANIUM AND VANADIUM DURING ENERGETIC PARTICLE IRRADIATION [J].
HOFER, WO ;
MARTIN, PJ .
APPLIED PHYSICS, 1978, 16 (03) :271-278
[10]   EVALUATION OF CONCENTRATION-DEPTH PROFILES BY SPUTTERING IN SIMS AND AES [J].
HOFMANN, S .
APPLIED PHYSICS, 1976, 9 (01) :59-66