MECHANISM OF CHEMICAL BATH DEPOSITION OF CADMIUM-SULFIDE THIN-FILMS IN THE AMMONIA-THIOUREA SYSTEM - IN-SITU KINETIC-STUDY AND MODELIZATION

被引:319
作者
ORTEGABORGES, R
LINCOT, D
机构
[1] Laboratoire d'Electrochimie Analytique et Appliquée, Unité Associée au CNRS, Ecole Nationale Supérieure de Chimie Paris, Paris
关键词
D O I
10.1149/1.2221111
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The mechanism of chemical bath deposition of cadmium sulfide thin films from the ammonia-thiourea system is studied in situ by means of quartz crystal microbalance technique (QCM). The influence of reaction parameters (concentration of reactants, pH, anions, temperature, stirring rate) is determined. The growth is thermally activated with an activation energy of about 85 kJ/mol, which probably corresponds to a chemical step related to the decomposition of thiourea. The results are well interpreted by assuming an atom-by-atom growth mechanism. A model is presented, which fits most of the experimental results quantitatively. It involves two or three rate-limiting surface steps, the formation of CdS taking place via a surface complex between thiourea and cadmium hydroxide. Analytical expressions are given, allowing prediction of the rate under various conditions in this system.
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页码:3464 / 3473
页数:10
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