HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON

被引：142

作者：

LECOMBER, PG ^{[1
]}

JONES, DI ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 05期

关键词：

D O I：

10.1080/14786437708232943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1173 / 1187

页数：15

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